Based on an industry-government-academia collaborative system established in Hsinchu Science Park as a business ecosystem, National Yang-Ming Chiao Tung University is an institution having world-class expertise in semiconductor devices, circuits, and systems. Tohoku University located in Sendai, Japan, is a worldwide top university in the field of fundamental material sciences and technologies including nanofabrication technologies. By cultivating a long-historical strong partnership (more than 20 years) between National Yang Ming Chiao Tung University and Tohoku University, we have built up the world’s most advanced and practical industry-government-academia research and development hub including education in both universities. As for the research areas for this joint research center, the center would have as its objective the tackling of urgent tasks in three fields through cooperation and the building of an academic base for problem-solving through the integration of the materials sciences and semiconductor technology. The three fields are energy device systems, nanodevice systems, and biomedical sensor networks, respectively. Through these partnership activities for goals, we would like to contribute to the vitalization of Japan’s and Taiwan’s electronics industry, based on international collaboration. According to the current roadmap for cutting-edge semiconductor technology, sub-5-nm generation devices are introduced to the market beginning in 2022 and sub-3-nm generation devices will be introduced beginning in 2025. The nanodevice systems group at the joint research center between National Yang Ming Chiao Tung University and Tohoku University has targeted the goal of developing cutting-edge semiconductor devices. In 2021, the joint research center between National Yang Ming Chiao Tung University and Tohoku University together with the National Institute of Advanced Industrial Science and Technology, Japan, and Taiwan Semiconductor Research Institute, has achieved the world’s first sub-3nm complementary field-effect transistors with integrated three-dimensional heterogeneous functions and materials that will be the technological basis for artificial intelligent chips.
